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Freescale Semiconductor Technical Data
Document Number: MRF8S26060H www..com Rev. 0, 4/2010
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
Designed for W-CDMA and LTE base station applications with frequencies from 2620- 2690 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. * Typical Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ = 450 mA, Pout = 15.5 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.
Frequency 2620 MHz 2655 MHz 2690 MHz Gps (dB) 16.3 16.3 16.3 hD (%) 33.2 33.0 32.9 Output PAR (dB) 6.3 6.3 6.2 ACPR (dBc) -37.2 -37.7 -37.1
MRF8S26060HR3 MRF8S26060HSR3
2620-2690 MHz, 15.5 W AVG., 28 V W-CDMA, LTE LATERAL N-CHANNEL RF POWER MOSFETs
* Capable of Handling 10:1 VSWR, @ 32 Vdc, 2655 MHz, 78 Watts CW Output Power (3 dB Input Overdrive from Rated Pout) * Typical Pout @ 1 dB Compression Point ] 60 Watts CW Features * 100% PAR Tested for Guaranteed Output Power Capability * Characterized with Series Equivalent Large-Signal Impedance Parameters and Common Source S-Parameters * Internally Matched for Ease of Use * Integrated ESD Protection * Greater Negative Gate-Source Voltage Range for Improved Class C Operation * Designed for Digital Predistortion Error Correction Systems * Optimized for Doherty Applications * RoHS Compliant * In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 inch Reel. Table 1. Maximum Ratings
Rating Drain-Source Voltage Gate-Source Voltage Operating Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature (1,2) Symbol VDSS VGS VDD Tstg TC TJ
CASE 465I-02, STYLE 1 NI-400-240 MRF8S26060HR3
CASE 465J-02, STYLE 1 NI-400S-240 MRF8S26060HSR3
Value -0.5, +65 -6.0, +10 32, +0 -65 to +150 150 225
Unit Vdc Vdc Vdc C C C
Table 2. Thermal Characteristics
Characteristic Thermal Resistance, Junction to Case Case Temperature 76C, 15.5 W CW, 28 Vdc, IDQ = 450 mA, 2655 MHz Case Temperature 80C, 60 W CW, 28 Vdc, IDQ = 450 mA, 2655 MHz Symbol RJC 1.0 0.90 Value (2,3) Unit C/W
1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955.
(c) Freescale Semiconductor, Inc., 2010. All rights reserved.
MRF8S26060HR3 MRF8S26060HSR3 1
RF Device Data Freescale Semiconductor
Table 3. ESD Protection Characteristics
Test Methodology Human Body Model (per JESD22-A114) Machine Model (per EIA/JESD22-A115) Charge Device Model (per JESD22-C101) Class 2 (Minimum) A (Minimum) IV (Minimum)
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Table 4. Electrical Characteristics (TA = 25C unless otherwise noted)
Characteristic Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate-Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 86 Adc) Gate Quiescent Voltage (VDD = 28 Vdc, ID = 450 mAdc, Measured in Functional Test) Drain-Source On-Voltage (VGS = 10 Vdc, ID = 1 Adc) VGS(th) VGS(Q) VDS(on) 1.2 2.0 0.1 1.9 2.7 0.18 2.7 3.5 0.3 Vdc Vdc Vdc IDSS IDSS IGSS -- -- -- -- -- -- 10 1 1 Adc Adc Adc Symbol Min Typ Max Unit
Functional Tests (1) (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 450 mA, Pout = 15.5 W Avg., f = 2690 MHz, Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. Power Gain Drain Efficiency Output Peak-to-Average Ratio @ 0.01% Probability on CCDF Adjacent Channel Power Ratio Input Return Loss Gps D PAR ACPR IRL 15.0 30.0 5.8 -- -- 16.3 32.9 6.2 -37.1 -16 18.0 -- -- -34.5 -10 dB % dB dBc dB
Typical Broadband Performance (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 450 mA, Pout = 15.5 W Avg., Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. Frequency 2620 MHz 2655 MHz 2690 MHz 1. Part internally matched both on input and output. (continued) Gps (dB) 16.3 16.3 16.3 hD (%) 33.2 33.0 32.9 Output PAR (dB) 6.3 6.3 6.2 ACPR (dBc) -37.2 -37.7 -37.1 IRL (dB) - 16 -17 -16
MRF8S26060HR3 MRF8S26060HSR3 2 RF Device Data Freescale Semiconductor
Table 4. Electrical Characteristics (TA = 25C unless otherwise noted) (continued)
Characteristic Symbol Min Typ
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Max
Unit
Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 450 mA, 2620-2690 MHz Bandwidth Pout @ 1 dB Compression Point, CW IMD Symmetry @ 52 W PEP, Pout where IMD Third Order Intermodulation 30 dBc (Delta IMD Third Order Intermodulation between Upper and Lower Sidebands > 2 dB) VBW Resonance Point (IMD Third Order Intermodulation Inflection Point) Gain Flatness in 70 MHz Bandwidth @ Pout = 15.5 W Avg. Gain Variation over Temperature (-30 C to +85C) Output Power Variation over Temperature (-30 C to +85C) P1dB IMDsym -- 16 -- -- 60 -- W MHz
VBWres GF G P1dB
-- -- -- --
80 0.2 0.014 0.006
-- -- -- --
MHz dB dB/C dBm/C
MRF8S26060HR3 MRF8S26060HSR3 RF Device Data Freescale Semiconductor 3
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C8 B1 C15 C3 C17 C2 R1 C1 C6 C7 CUT OUT AREA
C9
C11
C12
C16
+
C5
MRF8S26060 Rev. 4
C4
C10 C13
C14
Figure 1. MRF8S26060HR3(HSR3) Test Circuit Component Layout Table 5. MRF8S26060HR3(HSR3) Test Circuit Component Designations and Values
Part B1 C1, C2, C3, C4, C5 C6, C7 C8, C9, C10 C11, C13 C12, C14 C15 C16 C17 R1 PCB RF Ferrite Bead 5.6 pF Chip Capacitors 0.3 pF Chip Capacitors 10 F, 50 V Chip Capacitors 22 F, 50 V Chip Capacitors 22 F, 35 V Tantalum Capacitors 680 nF, 100 V Chip Capacitor 220 F, 63 V Electrolytic Capacitor 1 nF, 250 V Chip Capacitor 12 , 1/4 W Chip Resistor 0.030, r = 2.55 Description Part Number MPZ2012S300AT000 ATC100B5R6CT500XT ATC100B0R3BT500XT C5750X7R1H106KT C5750JF1H226ZT T491X226K035AT C3225X7R2A684KT MCGPR63V227M10X21 C2012X7R2102KT CRCW120612R0FKEA CuClad 25064-0300-55-22 TDK ATC ATC TDK TDK Kemet TDK Multicomp TDK Vishay Arlon Manufacturer
MRF8S26060HR3 MRF8S26060HSR3 4 RF Device Data Freescale Semiconductor
TYPICAL CHARACTERISTICS
D VDD = 28 Vdc, Pout = 15.5 W (Avg.), IDQ = 450 mA Single-Carrier W-CDMA, 3.84 MHz Channel Bandwidth Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF D, DRAIN EFFICIENCY (%) 17.4 17.2 17 Gps, POWER GAIN (dB) 16.8 16.6 16.4 16.2 16 15.8 15.6 15.4 2570 ACPR IRL 2590 2610 2630 2650 2670 2690 2710 35 34 33 32 Gps 31 -35 ACPR (dBc) 0 -5 -10 -15 -20 -25
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IRL, INPUT RETURN LOSS (dB)
0 -0.5 -1 -1.5 -2 -2.5 PARC (dB)
-36 PARC -37 -38 -39 -40 2730
f, FREQUENCY (MHz)
Figure 2. Output Peak-to-Average Ratio Compression (PARC) Broadband Performance @ Pout = 15.5 Watts Avg.
-1 0 IMD, INTERMODULATION DISTORTION (dBc) VDD = 28 Vdc, Pout = 52 W (PEP), IDQ = 450 mA Two-Tone Measurements (f1 + f2)/2 = Center Frequency of 2655 MHz IM3-U -3 0 IM3-L -4 0 IM5-U IM5-L -5 0 IM7-L IM7-U -60 1 10 TWO-T ONE SPACING (MHz) 100
-2 0
Figure 3. Intermodulation Distortion Products versus Two-T one Spacing
17 OUTPUT COMPRESSION AT 0.01% PROBABILITY ON CCDF (dB) 16 Gps, POWER GAIN (dB) 15 14 13 12 11 0 -1 -2 dB = 20 W -2 -3 dB = 27 W -3 Gps -4 -5 -6 10 V DD = 28 Vdc IDQ = 450 mA f = 2655 MHz, Single-Carrier W-CDMA, 3.84 MHz Channel Bandwidth, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF 20 30 40 50 36 30 PARC 24 60 -50 60 ACPR D, DRAIN EFFICIENCY (%) D 54 48 42 -25 -30 -35 -40 -45 ACPR (dBc) -20
-1 dB = 15 W
Pout, OUTPUT POWER (WATTS)
Figure 4. Output Peak-to-Average Ratio Compression (PARC) versus Output Power
MRF8S26060HR3 MRF8S26060HSR3 RF Device Data Freescale Semiconductor 5
TYPICAL CHARACTERISTICS
20 VDD = 28 Vdc, IDQ = 450 mA, Single-Carrier W-CDMA 3.84 MHz Channel Bandwidth, Input Signal 18 PAR = 7.5 dB @ 0.01% Probability on CCDF Gps, POWER GAIN (dB) 16 2620 MHz 14 12 10 8 1 10 Pout, OUTPUT POWER (WATTS) AVG. 2620 MHz 2655 MHz 2690 MHz Gps 10 0 100 2655 MHz 2690 MHz 30 20 D 50 ACPR 40 D, DRAIN EFFICIENCY (%) -10 -20 -30 -40 -50 -60 ACPR (dBc) 60 0
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Figure 5. Single-Carrier W-CDMA Power Gain, Drain Efficiency and ACPR versus Output Power
18 15 12 GAIN (dB) 9 6 3 0 2200 VDD = 28 Vdc Pin = 0 dBm IDQ = 450 mA 2300 2400 2500 IRL -15 -18 3000 Gain 0 -3 -6 -9 -12 IRL (dB) 3.84 MHz Channel BW
2600
2700
2800
2900
f, FREQUENCY (MHz)
Figure 6. Broadband Frequency Response
W-CDMA TEST SIGNAL
100 10 PROBABILITY (%) 1 Input Signal 0.1 (dB) 0.01 0.001 0.0001 0 W-CDMA. ACPR Measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF 1 2 3 4 5 6 7 8 9 10 10 0 -10 -20 -30 -40 -50 -60 -70 -80 -90 -100 -9 -7.2 -5.4 -3.6 -1.8 0 1.8 3.6 5.4 7.2 9 f, FREQUENCY (MHz) -ACPR in 3.84 MHz Integrated BW +ACPR in 3.84 MHz Integrated BW
PEAK-T O-A VERAGE (dB)
Figure 7. CCDF W-CDMA IQ Magnitude Clipping, Single-Carrier Test Signal MRF8S26060HR3 MRF8S26060HSR3 6
Figure 8. Single-Carrier W-CDMA Spectrum RF Device Data Freescale Semiconductor
VDD = 28 Vdc, IDQ = 450 mA, Pout = 15.5 W Avg. f MHz 2570 2590 2610 2630 2650 2670 2690 2710 2730 Zsource W 8.55 - j8.59 8.68 - j8.39 8.84 - j8.21 8.99 - j8.07 9.14 - j7.84 9.37 - j7.70 9.58 - j7.61 9.80 - j7.53 10.02 - j7.48 Zload W 6.29 - j8.92 6.27 - j8.73 6.27 - j8.54 6.26 - j8.37 6.26 - j8.20 6.24 - j8.06 6.21 - j7.91 6.17 - j7.78 6.13 - j7.65
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Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground.
Input Matching Network
Device Under Test
Output Matching Network
Z
source
Z
load
Figure 9. Series Equivalent Source and Load Impedance
MRF8S26060HR3 MRF8S26060HSR3 RF Device Data Freescale Semiconductor 7
ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS
VDD = 28 Vdc, IDQ = 450 mA, Pulsed CW, 10 sec(on), 10% Duty Cycle 58.5 57 55.5 Pout, OUTPUT POWER (dBm) 54 52.5 51 49.5 48 46.5 45 43.5 42 26 27 28 29 30 31 32 33 34 35 36 37 Pin, INPUT POWER (dBm) NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V P1dB Watts 73 73 73 dBm 48.7 48.6 48.6 P3dB Watts 89 88 89 dBm 49.5 49.4 49.5 2620 MHz 2690 MHz 2690 MHz 2655 MHz 2620 MHz Actual 2655 MHz Ideal
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f (MHz) 2620 2655 2690
Test Impedances per Compression Level f (MHz) 2620 2655 2690 P1dB P1dB P1dB Zsource 8.45 - j15.80 12.77 - j16.85 12.64 - j14.91 Zload 3.40 - j7.26 3.68 - j7.16 3.27 - j7.45
Figure 10. Pulsed CW Output Power versus Input Power @ 28 V
MRF8S26060HR3 MRF8S26060HSR3 8 RF Device Data Freescale Semiconductor
PACKAGE DIMENSIONS
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MRF8S26060HR3 MRF8S26060HSR3 10 RF Device Data Freescale Semiconductor
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MRF8S26060HR3 MRF8S26060HSR3 RF Device Data Freescale Semiconductor 11
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MRF8S26060HR3 MRF8S26060HSR3 12 RF Device Data Freescale Semiconductor
PRODUCT DOCUMENTATION AND SOFTWARE
Refer to the following documents, tools and software to aid your design process. Application Notes * AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins * EB212: Using Data Sheet Impedances for RF LDMOS Devices Software * Electromigration MTTF Calculator * RF High Power Model * .s2p File
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For Software, do a Part Number search at http://www.freescale.com, and select the "Part Number" link. Go to the Software & Tools tab on the part's Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision 0 Date Apr. 2010 * Initial Release of Data Sheet Description
MRF8S26060HR3 MRF8S26060HSR3 RF Device Data Freescale Semiconductor 13
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MRF8S26060HR3 MRF8S26060HSR3
Document Number: MRF8S26060H Rev. 14 0, 4/2010
RF Device Data Freescale Semiconductor

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